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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD188
DESCRIPTION *With TO-3 package *Large current capability *Wide area of safe operation APPLICATIONS *For audio frequency output applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=75 CONDITIONS Open emitter Open base Open collector VALUE 100 100 6 7 60 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A ; IB=0.5A IC=5A ; IB=0.5A VCB=100V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=2V IC=0.5A ; VCE=10V 30 10 MIN 100 100 6
2SD188
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V V
2.0 2.5 0.1 0.1 120
V V mA mA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD188
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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